- Pulse Voltages up to 8 kV
- Repetition Rates up to 5 kHz
- Completely Solid State
- Rise times less than 10 nanoseconds
- Wavelengths from 300 nm to 2500 nm
- Operates safely with KD*P, CdTe, BBO LiNbO3 and other Q-switch materials
- Available with EMI/RFI suppressed HV Driver / Optical Head Assembly.
Meets European CE Mark requirements
5048 System design applies the latest technology in high voltage field effect transistor circuits.
Capable of switching speeds of 5 nanoseconds and operation at up to 5 kHz, 5048 Systems provide
versatility, high reliability, and ease of use.
Systems are available with KD*P Q-switches for operation at wavelengths ranging from 300 nm to
1100 nm or with lithium niobate Q-switches for wavelengths from 700 nm to 2500 nm. Wavelength
range for a particular crystal material is a function of the anti-reflection coatings on the Q-switch.
Brewster angle cut lithium niobate crystals are available for use over the full range of crystal
transmission.
5048 Systems consist of a Power Supply / Pulse Timing Generator, a HV Pulse Output Module and
a Q-switch. A Glan-Laser Air Spaced Polarizer may also be specified. The HV Pulse Module should be
in close proximity to the Q-switch and the Power Supply / Timing Generator is remotely located .
5048 systems can operate over a wide range of output pulse voltages with no change in the output
pulse waveform. A unique characteristic of the FET HV output switches is that the output pulse rise time
remains constant over the full range of output voltages.
Pulsed output voltage of the HV Switching module can be manually adjusted by a front panel control
on the power supply to accommodate quarter wave or half wave operation. This may be accomplished
for wavelengths up to 2500 nm for lithium niobate Q-switches and up to 1100 nm for KD*P Qswitches.
KD*P Q-switches with sol gel antireflection coatings on the crystal are recommended for use with large
beam diameters (>8 mm) and where peak power densities of more than 750 MW/cm2 (#10 nsec
pulse width) are present. Lithium niobate is recommended for applications with high repetition
rates (>100 pps) and peak power densities of <250 MW/cm2.
For OEM and other applications where the HV Switching Module and Q-switch are enclosed in a
shielded enclosure, the configuration pictured above is recommended. Where the Module and Qswitch
are not so enclosed and high voltage switching noise must be suppressed, the Optical
Head Assembly enclosure shown on the following page should be specified. This enclosure complies
with all requirements of the new European EMC regulations for radiated and conducted emissions.
