5060 Systems were designed for optimal Q- switching performance with the newest electro- optic crystal materials such as RTP (RbTiOPO4) and RTA (RbTiOAsO4 ). These materials do not exhibit a piezoelectric effect. The “piezo” effect can stimulate a photoelastic response in the crystal which, in some Q-switching systems, can limit the Q-switching repetition rate. In some Q-switching systems where piezoelectric ringing can be tolerated, Pockels effect, electro-optic light modulators using KD*P, CdTe and LiNbO3 can be used.
The 5060 utilizes the latest technology in high voltage MOSFET circuits. Capable of switching speeds of less than 10 nanoseconds and operation at up to 15 kHz, 5060 Systems provide versatility, high reliability, and ease of use.
- Pulse Voltages up to 5kVRepetition Rates up to 15 kHz
- Completely Solid State
- Rise times # 10 nanoseconds
- Wavelengths from 300 nm to .4000 nm
- Operates safely with RTP, KD*P, LiNbO3 and other Q-switch materials
- EMI/RFI suppressed Optical Head Assembly
- Meets European CE Mark requirements
5060 Systems are presently available with RTP for use with lasers operating in the 450 to 1064 nm region. RTP crystal Q-switches are recommended for operation at Q-switching repetition rates >5 kHz when photoelastic effects cannot be tolerated.
For wavelengths # 1064 nm, KD*P Q-switches are available for operation at wavelengths ranging from 300 nm to 1064 nm or with lithium niobate Q-switches for wavelengths from 700 nm to 2500 nm, or RTP from about 400 nm up to 4000 nm.
5060 Systems consist of a (PS/TG) Power Supply/ Timing Generator, and an Optical Head Assembly (OHA) that contains the Q-switch and high voltage switching circuits.
5060 systems operate over a wide range of output pulse voltages with no change in the output pulse waveform. A unique characteristic of the MOSFET HV output switches is that the output pulse rise time remains constant substantially over the full range of output voltages.
Pulsed output voltage of the HV Switching module can be manually adjusted by a front panel control on the PS/TG to accommodate the voltage required by a given Q-switch at a particular wavelength. Typical half wave retardation voltages can be attained for wavelengths up to 2500 nm for RTP and lithium niobate Q-switches. Quarter wave operation with KD*P devices is attainable at wavelengths up to 1064 nm.
RTP Q-switches can be utilized over the full repetition frequency capability of the 5060 System at Peak Power Densities of $600 MW/cm2 and average power of . 10 watts. Devices with clear aperture diameters of 4 and 6 mm are available in the 1147 Series RTP Q-switches.
KD*P Q-switches with sol gel antireflection coatings on the crystal are recommended for use with large beam diameters (>8 mm) and where peak power densities of more than 850 MW/cm2 (#10 nanosecond pulse width) are present. Repetition rates should be limited to less than 10 kHz. The Q1059P Series Q-switches are available with 10 and 12 mm clear apertures.
