10 kHz, 20 kHz, 50 kHz, 100 kHz
LASER PULSE GATING SYSTEMS

• Repetition Rates up to 100 kHz

• ≤ 4 nanosecond Rise & Fall Times

• Adjustable Output Voltage

• Pulse Width Range 6 ns to >1 :s

• EMI/RFI Suppressed

• Wavelength Range: 200 nm to 1650 nm

Designed for regenerative laser amplifier seeding and pulse extraction, 5100ERW Systems are valuable for
laser pulse picking/chopping, mode locked pulse gating, Q-switching and cavity dumping. The systems
are effective in both intracavity and extracavity applications and exhibit rise and fall times as fast as
3 ns. They offer the latest technology in reliable, solid state, high voltage switching design and superior
electro-optic Pockels cells.
Series 5100ERW Systems, available in 4 repetition rate/voltage ranges, utilize high speed, HV MOSFET
switching circuits and Pockels cell technology developed and refined at FastPulse Technology
through decades of manufacturing and improving its Laser Pulse Gating Systems. These systems are
noted for convenience, longevity, reliability, and noisefree operation.
5100ERW System High Voltage MOSFET Switching Modules are configured for operation at voltages
suitable for half wave operation of RTP (Rubidium Titanyl Phosphate) E-O modulators over their useful
spectral range of about 550 nm to 2000 nm. The systems will also accommodate BBO (β Barium Borate)
modulators operating in the range of 200 nm to approximately 532 nm. By simply adjusting the front
panel HV control, the user can operate the system over the full range of voltages – from less than the
quarter wave voltage to more than the half wave voltage – without loss of efficiency or increased rise or
fall times. Half wave retardation corresponds to 900 rotation of the incoming polarization plane. Operation
in the half wave mode may obviate the usual requirement for a quarter or half wave plate in the
optical train in many regenerative amplifier configurations.

Series 1147 Pockels cells utilize RTP (Rubidium Titanyl Phosphate), noted for its ability to produce optical
switching without superimposing photoelastic ringing on the transmitted beam. RTP modulators use two
crystals, a configuration that provides excellent thermal compensation and stability with low operating
voltages.
Series 1150 BBO Pockels cells utilizing Beta Barium Borate crystals are currently available in aperture sizes of 3 and 4 mm diameters. BBO is noted for its very low piezoelectric response, ability to tolerate high average power and operate in the UV spectrum.
Since BBO requires significantly higher voltages than RTP, aperture sizes are limited to about 4 mm.
The Model 5100ER Power Supply/Timing Generator provides all of the voltages and timing functions
necessary for controlling time delay, pulse width and operating voltage. It accepts trigger signals for a
variety of sources including PIN photodiodes. All controls are located in the PS/TG cabinet which can
be mounted in a rack or used on a bench top.
The 5100EMW Optical Head Assembly contains the Pockels cell mounted on a gimbal for precision pitch
and azimuth positioning and the HV MOSFET Switch Modules. The OHA is virtually noise-free which
makes it very desirable in applications that cannot tolerate radiated or conducted EMI/RFI. The OHA is
provided with two water connections which can be used in conjunction with the laser cooling system.
5100ERW Systems are shipped with a Users Manual and a set of interconnecting cables.

SERIES 5100ERW High Repetition Rate Laser Pulse Gating Systems DATA SHEET (PDF)

• Pulse Voltages up to 5kVRepetition Rates up to 15 kHz
• Completely Solid State
• Rise times # 10 nanoseconds
• Wavelengths from 300 nm to .4000 nm
• Operates safely with RTP, KD*P, LiNbO3 and other Q-switch materials
• EMI/RFI suppressed Optical Head Assembly
• Meets European CE Mark requirements

5060 Systems are presently available with RTP for use with lasers operating in the 450 to 1064 nm region. RTP crystal Q-switches are recommended for operation at Q-switching repetition rates >5 kHz when photoelastic effects cannot be tolerated.

For wavelengths # 1064 nm, KD*P Q-switches are available for operation at wavelengths ranging from 300 nm to 1064 nm or with lithium niobate Q-switches for wavelengths from 700 nm to 2500 nm, or RTP from about 400 nm up to 4000 nm.

5060 Systems consist of a (PS/TG) Power Supply/ Timing Generator, and an Optical Head Assembly (OHA) that contains the Q-switch and high voltage switching circuits.

5060 systems operate over a wide range of output pulse voltages with no change in the output pulse waveform. A unique characteristic of the MOSFET HV output switches is that the output pulse rise time remains constant substantially over the full range of output voltages.

Pulsed output voltage of the HV Switching module can be manually adjusted by a front panel control on the PS/TG to accommodate the voltage required by a given Q-switch at a particular wavelength. Typical half wave retardation voltages can be attained for wavelengths up to 2500 nm for RTP and lithium niobate Q-switches. Quarter wave operation with KD*P devices is attainable at wavelengths up to 1064 nm.

RTP Q-switches can be utilized over the full repetition frequency capability of the 5060 System at Peak Power Densities of $600 MW/cm2 and average power of . 10 watts. Devices with clear aperture diameters of 4 and 6 mm are available in the 1147 Series RTP Q-switches.

KD*P Q-switches with sol gel antireflection coatings on the crystal are recommended for use with large beam diameters (>8 mm) and where peak power densities of more than 850 MW/cm2 (#10 nanosecond pulse width) are present. Repetition rates should be limited to less than 10 kHz. The Q1059P Series Q-switches are available with 10 and 12 mm clear apertures.

5046 SYSTEMS DATA SHEET (PDF)

5046SC systems can operate over a wide range of voltages. They are capable of producing quarter and halfwave retardation voltages over an optical spectrum of 300 nm to more than 2000 nm with appropriate light modulators.    Output pulse amplitude is adjustable by a front panel potentiometer.
Exhibiting optical rise and fall times as fast as 3 nanoseconds (depending on load), 5046SC Systems are exceptionally useful for regenerative amplifier switch-out, laser pulse slicing, mode locked pulse gating, cavity dumping and Q-switching. The systems are valuable for both intracavity and extracavity applications and offer the latest technology in reliable, lowest radiated noise, solid state, high voltage switching design. They are used by several OEM laser manufacturers in their regenerative laser systems.
Series 5046SC Systems can be configured for a variety of applications. An extensive selection of components and operating parameters are available. Optical switching is accomplished by Series 3900 or 3910 Lithium Niobate or Series 1000 KD*P Pockels cells manufactured by Lasermetrics to match the electrical characteristics of the 5046 High Voltage Driver.

Maximum system repetition rate is determined by the Pockels cell capacitance and maximum power supply high voltage. For a Model 1059 Pockels cell (KD*P crystal, 5 pf) and nominal 7 kV maximum, the repetition rate is limited to about 2 kHz. At shorter wavelengths and lower operating voltages, repetition rates of 5 kHz are attainable. Higher repetition rates are possible under certain conditions. Our engineering staff will work with you to optimize a system for your particular application.
KD*P Pockels cells with sol gel AR crystal coatings exhibit a damage threshold in the range of 20 GW/cm2 with laser pulse widths less than 100 ps.
Lithium niobate devices (Series 3900 and 3910) have a damage threshold in the range of 1 GW/ cm2 for a <100 ps pulse width. Series 3910 Lithium Niobate cell crystals are acoustically damped to minimize piezoelectric ringing and increase the frequency modulation range.    Series 3910 devices are electrically and optically similar to 3900 Series devices of similar aperture.

5046SC Systems are self-contained with the Optical Head Assembly packaged in a shielded enclosure. Unshielded, open configurations for end user packaging are also available. A typical shielded system consists of the following elements:

• 5046SC HV-PFN Module with internal HV Power Supplies
• Q1059P Series KD*P or 3910 Series Lithium Niobate Pockels Cell with AR coatings
• MG-145 Precision Pitch & Azimuth Gimbal (with Pockels cell mounted)
• Cover & Cable Set
• Optional Glan-Air or Dielectric Film Polarizers are available

5046ER Systems can be configured for a variety of applications. An extensive selection of components and operating parameters is available. The Power Supply/Timing Generator (PS/TG) is a standard 19″wide X 4.75″ high (3U size) rack mountable configuration. The Optical Head Assembly (OHA) options are shown on the next page.
Optical switching is accomplished by Series 1040, 1145 and Q1059P KD*P (DKDP); Series 1147 (RTP) and Series 1150 BBO Pockels cells which rotate the incoming plane of polarization of the laser beam. The cells are designed to match the optical wavelength and the electrical characteristics of the 5046E High Voltage MOSFET Switching Driver Modules.

Series 1040 KD*P Pockels cells are available with apertures or 10, 16 and 20 mm and with single or double crystal configurations.

The Q1059P Series Pockels cells are available with 10 and 12 mm clear apertures.
Series 1145 KD*P cells are miniature devices (19 mm Diameter X 25 mm Long) with 8 mm clear apertures.
Series 1147 Pockels cells utilize RTP (Rubidium Titanyl Phosphate), noted for its ability to produce optical switching without superimposing photoelastic ringing on the transmitted beam. RTP modulators use two crystals, a configuration that provides excellent thermal compensation and stability with low operating voltages.
Series 1150 BBO Pockels cells utilizing Beta Barium Borate ($BaB2O4) are currently available in aperture sizes of 3, 4 and 6 mm diameters. BBO is noted for its very low piezoelectric response, ability to tolerate high average power and operate in the UV spectrum.
SERIES 5046ER E-O SYSTEMS
FOR LASER PULSE EXTRACTION, GATING & CHOPPING
RoHS

5046ER Systems incorporate a shielded “OHA” (Optical Head Assembly) enclosure for EMI/RFI suppression and a separate Power Supply-Timing Generator cabinet. The systems are RoHS Compliant.
High average and peak power operation with the standard KD*P devices in the range of 500 to 1100 nm is enhanced by the use of Sol Gel antireflection coatings on the crystal surfaces. Damage thresholds in the range of 10 to 20 GW/cm2 with laser pulse widths of less than 10 ps and up to10 GW/cm2 with pulse widths <1 ns are feasible.
The 5046ER System’s High Voltage MOSFET Switch Modules are configured for operation at voltages suitable for half wave operation of KD*P longitudinal field modulators in the 1000 nm range (.7 kV). By simply adjusting the front panel HV control, the driver can operate at the quarter wave voltage (or less) without loss of efficiency or increased rise or fall times. Operation in the half wave mode may obviate the usual requirement for a quarter or half wave plate in the optical train in many regenerative amplifier configurations.

Maximum system repetition rate is determined by the Pockels cell capacitance and high voltage setting. For a Model Q1059P Pockels cell (5 pf) and nominal 7 kV operating voltage, the repetition rate is limited to about 5 kHz. At 4 kV maximum voltage, the repetition rate increases to about 7.5 kHz maximum. For RTP Pockels cells, (C=5 pf) maximum repetition rate is approximately 7.5 kHz, a benefit of RTP’s lower operating voltages. BBO Model 1150-6 mm devices can operate at 1⁄2 wave retardation at 800 nm.